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October 2013
FDP038AN06A0 / FDI038AN06A0
N-Channel PowerTrench ? MOSFET
60 V, 80 A, 3.8 m Ω
Features
? R DS(on) = 3.5 m ? ( Typ.) @ V GS = 10 V, I D = 80 A
? Q G(tot) = 96 nC ( Typ.) @ V GS = 10 V
? Low Miller Charge
Applications
? Synchronous Rectification for ATX / Server / Telecom PS U
? Battery Protection Circui t
? Motor drives and Uninterruptible Power Supplie s
? Low Q rr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82 5 84
D
GD
DS
S
TO-220
G
I 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Sym bol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Para meterr
FDP038AN06A0
FDI038AN06A0
60
± 20
U nit
V
V
Drain Current
I D
E AS
P D
T J , T STG
Continuous (T C < 151 o C, V GS = 10V)
Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 62 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
80
17
Figure 4
625
310
2.07
-55 to 175
A
A
A
mJ
W
W/ o C
o C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max. (Note 2)
0.48
62
o
o
C/W
C/W
? 200 2 Fairchild Semiconductor Corporation
FDP038AN06A0 / FDI038AN06A0 Rev. C1
1
www.fairchildsemi.com
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